Reliability studies of Gunn diodes
Abstract
Gallium arsenide Gunn diodes have been investigated for long-term reliability prediction and verification of failure mechanisms. Data are presented concerning burn-out distribution in time, change in dc and RF parameters after dc high-temperature burn-in, and step-stress testing. Alloying of the contact metalization into the active region above a critical temperature hampered interpretation of the step-stress results. Accordingly, constant stress testing was initiated. An improved thermal resistance measurement technique is presented for Gunn diodes. Results are verified using an IR radiometer.
- Publication:
-
Reliability Physics 1974
- Pub Date:
- 1974
- Bibcode:
- 1974reph.proc..284R
- Keywords:
-
- Accelerated Life Tests;
- Component Reliability;
- Failure Modes;
- Gallium Arsenides;
- Gunn Diodes;
- Thermal Resistance;
- Alloying;
- Burnout;
- Critical Temperature;
- High Temperature Tests;
- Infrared Radiometers;
- Metallizing;
- Quality Control;
- Electronics and Electrical Engineering