Reliability assessment of a semiconductor memory by design analysis
Abstract
In order to determine failure modes, problem areas, or application limitations of complex LSI circuits, it is necessary to determine vital information on the design and construction of the part. The present paper reviews the functional features and circuit details of a 1024-bit (4 by 256) field-programmable ROM as an example of an LSI device which has many unique features and which has in the past experienced a unique failure mode (program recovery). All of the memory circuits are covered, but emphasis is placed on the three main elements essential to establishing and maintaining the program. These elements include (1) the nichrome resistor programming element, (2) the circuit that develops and delivers the programming pulse, and (3) the process and construction of the programming circuit. It is shown that effective test and evaluation of complex parts must be based on an understanding of the part design and construction in order to emphasize the areas of questionable reliability.
- Publication:
-
Reliability Physics 1974
- Pub Date:
- 1974
- Bibcode:
- 1974reph.proc...74B
- Keywords:
-
- Computer Storage Devices;
- Design Analysis;
- Failure Modes;
- Large Scale Integration;
- Reliability Analysis;
- Semiconductor Devices;
- Bipolar Transistors;
- Chips;
- Circuit Reliability;
- Equivalent Circuits;
- Failure Analysis;
- Nichrome (Trademark);
- Programming;
- Transistor Circuits;
- Electronics and Electrical Engineering