Noise in electron bombarded JFET's
Abstract
Low-temperature measurements of the generation-recombination (g-r) noise in electron bombarded junction field effect transistors (JFETs) and subsequent analysis of the results show that it is possible to predict the noise in JFETs operated in radiation environments. Theoretical calculations show that in the frequency range 100 Hz to 600 kHz, the g-r noise produced by SRH centers in channel dominates over other g-r noise sources in a JFET irradiated with high energy electrons.
- Publication:
-
Inventing the Model of the Future
- Pub Date:
- 1974
- Bibcode:
- 1974imf..proc...36K
- Keywords:
-
- Electron Bombardment;
- Field Effect Transistors;
- Junction Transistors;
- Noise Generators;
- Electron Irradiation;
- High Energy Electrons;
- Low Temperature;
- Noise Spectra;
- Temperature Effects;
- Temperature Measurement;
- Electronics and Electrical Engineering