Above X-band performance of Baritt diodes
Abstract
The predicted small signal noise measure and impedance of pn nu p Baritt diodes is described for three values of n region doping density at frequencies up to 20 GHz. It is shown that for suitable values of doping density, small signal noise measures of order 10 dB or less can be maintained up to 20 GHz, and small signal negative resistances of at least 1 ohm. A large signal diode simulation is used in conjunction with a simple design approach, to predict the output power of oscillators at 15 GHz. Assuming a diode series loss of 0.3 ohm, an output power of 17 mW is predicted for a diode with doping density of 10 to the 16th power per cu cm.
- Publication:
-
4th European Microwave Conference
- Pub Date:
- 1974
- Bibcode:
- 1974eumw.conf..182A
- Keywords:
-
- Avalanche Diodes;
- Design Analysis;
- Microwave Oscillators;
- Negative Resistance Devices;
- P-N-P Junctions;
- Additives;
- Background Noise;
- Computerized Simulation;
- Junction Diodes;
- Signal Analysis;
- Silicon Junctions;
- Superhigh Frequencies;
- Electronics and Electrical Engineering