Numerical simulation of charge coupled device operation, abbreviated form
Abstract
The research consisted of a detailed theoretical study of the operation of both surface and buried channel charge coupled devices (CCD). In the case of surface charge coupled devices, the primary results were: the development of the technologically important push clock clocking scheme, the numerical simulation of the operation of two and four phase overlapping gate CCD, the estimation of the importance of interface states in limiting the charge transfer for a number of different clocking schemes, the estimation of the small signal or long time decay of the charge in surface channel CCD. In the case of buried channel CCD (BCCD), the primary results were: the development of detailed one and two dimensional solutions for the electrostatics of overlapping gate BCCCD, and the numerical simulation of the details of the operation of BCCCD. Finally, a new CCD device structure was explored, the Schottky barrier CCD. This new device structure may have potential applications in the manufacture of CCD in materials other than silicon.
- Publication:
-
California Institute of Technology Report
- Pub Date:
- October 1974
- Bibcode:
- 1974cait.rept.....M
- Keywords:
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- Charge Coupled Devices;
- Computerized Simulation;
- Charge Transfer;
- Electrostatics;
- Schottky Diodes;
- Electronics and Electrical Engineering