Technology of integration of junction field effect transistors

The technology of monolithic integration of electrical independent n-channel junction field effect transistors by two different methods was developed and investigated. Junction field effect transistors with square law transfer characteristic, values of transconductance up to 30.000 micro mho at pinch off voltages between 2 and 5 volts and drain currents between 20 and 60 mA could be integrated. The influences of gate geometry on the electrical characteristics of JFET and the consequences of the additional equivalent circuit components of the integrated JFET's were investigated.