High frequency noise and source determination using the thin base transistor model
Abstract
The localization and intensity of thermal and short noise were determined by an extension of the Van Der Ziel classical analysis. In spite of simplifying assumptions such as transistor linearity, absence of high injection phenomena and of the reaction capacitance and same value of the current amplification in various frequency ranges, the agreement between experiment and simulation is good in the frequency range from 1 MHz to 5 GHz and for current densities lower than 6,000 A/sq cm.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- September 1974
- Bibcode:
- 1974STIN...7620365F
- Keywords:
-
- Bipolar Transistors;
- Computerized Simulation;
- Correlation;
- Performance Tests;
- Signal To Noise Ratios;
- Approximation;
- Mathematical Models;
- Shot Noise;
- Thermal Noise;
- Electronics and Electrical Engineering