Physical fundamentals of the technology of silicon photodiodes with metal-semiconductor contact (Schottky photodiodes)
Abstract
A method to produce Au-Schottky-photodiodes on n-silicon is described. The measured electrical parameters correspond approximately with the theoretically expected values. On the other hand no high sensitivity could be achieved in the short wavelength spectral region. An inversion layer directly at the metal-semiconductor boundary may be responsible for the low sensitivity in this region. Consequently it is obviously not possible to make Schottky-photodiodes with high sensitivity in the near ultraviolet and simultaneously have a high cutoff frequency.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- October 1974
- Bibcode:
- 1974STIN...7516759F
- Keywords:
-
- Photodiodes;
- Schottky Diodes;
- Silicon;
- Equipment Specifications;
- Inversions;
- N-Type Semiconductors;
- Photosensitivity;
- Silver;
- Ultraviolet Radiation;
- Electronics and Electrical Engineering