Noise in ion implanted and diffused integrated circuit resistors
Abstract
In order to aid in optimizing the design of the integrated circuit resistors, the noise of two types of resistors, buried layer resistors and surface layer resistors, was studied experimentally and theoretically, as a function of current, impurity concentration, trap density, junction reverse bias and the dimensions. Traps in the buried layer coupled with ambipolar diffusion and recombination in the transition region are considered to be the noise process in the buried layer resistors. The results are explained with a diffusion noise theory, which in essence is similar to that of MacFarlane and Richardson. Surface states are considered to be the cause of the 1/f noise in the surface layer resistors. A model similar to McWhorter's is used for the theory which can estimate the approximate surface state density. The theoretical noise equations developed can help the design and the processing of these devices.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1974
- Bibcode:
- 1974PhDT........72H
- Keywords:
-
- Integrated Circuits;
- Ion Implantation;
- Noise Spectra;
- Resistors;
- Design Analysis;
- Diffusion Theory;
- Noise Reduction;
- Surface Layers;
- Electronics and Electrical Engineering