A measurement technique of time-dependent dielectric breakdown in MOS capacitors
Abstract
The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.
- Publication:
-
Microelectronics Reliability
- Pub Date:
- June 1974
- DOI:
- 10.1016/0026-2714(74)90321-7
- Bibcode:
- 1974MiRe...13..209L
- Keywords:
-
- Automatic Test Equipment;
- Capacitors;
- Dielectrics;
- Electrical Faults;
- Metal Oxide Semiconductors;
- Time Dependence;
- Annealing;
- Display Devices;
- Electrical Measurement;
- Electronic Equipment Tests;
- Radiation Effects;
- Standard Deviation;
- Statistical Tests;
- Temperature Effects;
- Wafers;
- Electronics and Electrical Engineering