Single-heterostructure PbS(1-x)Sex diode lasers
Abstract
PbS(1-x)Sex single-heterostructure diode lasers have been fabricated using a 300 °C vacuum deposition process to grow layers of p- or n-PbS0.72Se0.28 onto n-PbS0.78Se0.22 bulk substrates. At 12 K, laser emission occurs at 4.98 μm in the grown PbS0.72Se0.28 layer. Maximum power outputs are on the order of 1 mW. The 0.20% lattice mismatch at the heterojunction does not impose serious limitations on laser performance.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- November 1974
- DOI:
- 10.1063/1.1663185
- Bibcode:
- 1974JAP....45.5069S
- Keywords:
-
- Junction Diodes;
- Laser Outputs;
- Lead Selenides;
- Semiconductor Lasers;
- Vacuum Deposition;
- Current Density;
- Epitaxy;
- Laser Materials;
- P-N Junctions;
- Sulfur Compounds;
- Lasers and Masers