Saturation behavior of the optical gain in GaAs injection lasers
Abstract
A recent analysis of the saturation behavior of the optical gain in semiconductor lasers has predicted a strong spectral hole-burning effect. With an improved treatment of the intraband relaxation in the analysis the effect disappears entirely.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- October 1974
- DOI:
- Bibcode:
- 1974IJQE...10..825L
- Keywords:
-
- Gallium Arsenide Lasers;
- Injection Lasers;
- Nonlinear Optics;
- Power Gain;
- Saturation;
- Electron Density (Concentration);
- Holes (Electron Deficiencies);
- Molecular Relaxation;
- Pumping;
- Spontaneous Emission;
- Lasers and Masers