Compatibility study of an HF transistor linked to a Schottky diode to obtain ultra-fast commutation characteristics
Abstract
The design of an integration technology for a Schottky diode HF transistor in view of ultrafast commutation characteristics is presented. The presence of the diode perturbs the rise and fall time of the applied signals transmitted by the parasitic capacitance. The corresponding degradation was evaluated and a compromise found for which the retention time was increased by a factor of 30 at the cost of a 20 percent rise/fall time degradation. Various barriers, including Si, Pt, Cr, Mo, were studied. The final barrier choice was SiPt and the final commutation time was 0.6 nanoseconds.
- Publication:
-
Final Report Lignes Telegraphiques et Telephoniques
- Pub Date:
- December 1973
- Bibcode:
- 1973lttc.rept.....D
- Keywords:
-
- Communication;
- Compatibility;
- Schottky Diodes;
- Technology Assessment;
- Transistors;
- Capacitance;
- Degradation;
- Time Dependence;
- Ultrahigh Frequencies;
- Electronics and Electrical Engineering