Performance improvement of a field effect transistor with Schottky barrier on GaAs
Abstract
A set of improvements of the FET with Schottky barrier on GaAs are reported. The epitaxial growth optimal conditions are discussed with regard to influence of oxygen and Cu, the buffer zone, and delayed growth technology optimization was performed by studying the isolation by ionic cleaning, oxygen implantation and chemical cleaning, photoengraving and contact techniques, localized N plus epitaxies, and study of the various geometries. The doping of the epitaxial zones was multiplied by two with corresponding thickness decrease while increasing the mobility. A characterization method both in concentration and thickness was found. As a result the cutoff frequency increased from 8 to 30 GHz while the noise factor at 6GHz decreased from 9 to 3.8dB. A computerized simulation of the transistor equivalent circuit was refined to the point that X-band performance may be forecast with cutoff at 37 GHz and 4 db noise factor.
- Publication:
-
Final Report Laboratoires d'Electronique et de Physique Appliquee
- Pub Date:
- November 1973
- Bibcode:
- 1973depa.reptQ....V
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Optimization;
- Schottky Diodes;
- Technology Assessment;
- Additives;
- Carrier Mobility;
- Characterization;
- Computerized Simulation;
- Epitaxy;
- Signal To Noise Ratios;
- Solid-State Physics