Energy-Loss and Stopping-Power Measurements between 2 and 10 MeV/amu for 12C, 14N, and 16O in Silicon
Abstract
The energy deposited in a 94.6-μm-thick totally depleted silicon detector by beams of 12C, 14N, and 16O was measured at incident energies up to 10 MeV/amu. Theoretical stopping powers for these ions are derived from best theoretical values for protons and a universal distribution of ion charges as a function of energy. The effect of a recently derived z3 correction is included. This correction is found to improve the fit to the experimental values.
- Publication:
-
Physical Review B
- Pub Date:
- July 1973
- DOI:
- 10.1103/PhysRevB.8.103
- Bibcode:
- 1973PhRvB...8..103K