Localization in Disordered Materials: Binary Alloys
Abstract
A criterion for localization of electron states in disordered materials is presented. Applications to binary alloys, made using the self-energy calculated in the coherent-potential approximation, confirm the Mott-Cohen-Fritzsche-Ovshinsky model in detail. Mobility edges occur inside the band edges. A mobility gap can appear within the band. The band can split into sub-bands, each with mobility edges. Below a critical concentration, an Anderson transition, where the minority sub-band becomes entirely localized, can occur.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 1970
- DOI:
- 10.1103/PhysRevLett.25.520
- Bibcode:
- 1970PhRvL..25..520E