1f Noise Observed on Semiconductor Surfaces
Abstract
The 1f noise on etched silicon surfaces can be influenced by adsorption and desorption of water and by heating processes. The observed time constants are the same as the constants of chemisorption. In particular a correlation of 1f noise to the density of active centers of chemisorption is found.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 1969
- DOI:
- 10.1103/PhysRevLett.23.912
- Bibcode:
- 1969PhRvL..23..912J