Destructive reverse breakdown in large area phosphorus diffused high voltage silicon n+p junctions
Abstract
Destructive breakdown of phosphorus diffused deep junctions in silicon at high voltages is described. It is shown that this is a bulk effect occurring at voltages close to the expected avalanche voltage. The depth of junction makes direct observation of the breakdown sites difficult, but investigation shows that this takes place in multistage deterioration of the I-V characteristics which is also found to occur in surface induced breakdown. Direct observation of surface breakdown sites reveal that this is a field initiated phenomenon which only deteriorates into 'second breakdown' at low voltages. A model of bulk breakdown derived from the surface case is proposed to explain the junction damage, and this differs from the model of English in that thermal breakdown only occurs in the final stages.
- Publication:
-
Solid State Electronics
- Pub Date:
- October 1967
- DOI:
- 10.1016/0038-1101(67)90147-5
- Bibcode:
- 1967SSEle..10..983T