Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. II. Mobility of n-type Gallium Arsenide
The quantum-conductivity formula derived in the previous paper is evaluated for screened Coulomb potentials. The mobility is obtained in the form μ=μ0[1+δB+δM+δD]-1, where μ0 is the Brooks-Herring mobility, δB is a correction due to higher Born approximations for the incoherent scattering, and δM and δD are, respectively, multiple scattering and dressing corrections. Analytic formulas, suitable for applications to specific semiconductors, are derived for the corrections. Applications are made to n-type GaAs, and it is found that the corrections are significant at all temperatures and concentrations of practical interest.