Orbital occupancy and hybridization in strained SrV O3 epitaxial films
Abstract
Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrV O3) , having a single electron in a 3 d orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrV O3 thin films, where the metal-oxide sublattice is corner connected. Using x-ray absorption and x-ray linear dichroism at the V L2 ,3 and O K edges, it is observed that tensile or compressive epitaxial strain change the hierarchy of orbitals within the t2 g and eg manifolds. Data show a remarkable 2 p −3 d hybridization, as well as a strain-induced reordering of the V 3 d (t2 g,eg ) orbitals. The latter is itself accompanied by a consequent change of hybridization that modulates the hybrid π* and σ* orbitals and the carrier population at the metal ions, challenging a rigid band picture.
- Publication:
-
Physical Review Materials
- Pub Date:
- September 2021
- DOI:
- 10.1103/PhysRevMaterials.5.095002
- arXiv:
- arXiv:2108.11718
- Bibcode:
- 2021PhRvM...5i5002M
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science