Robust type-II BP/AlN van der Waals heterostructure: A first-principles study
Abstract
To achieve photoelectric appliance, effective carrier separation is a vital question. Here, we construct van der Waals (vdW) heterostructure by superimposing two different two-dimensional (2D) layer materials BP and AlN via vdW force. The results show that 2D BP/AlN heterostructure exhibits direct band gap characteristics and has a type-II band alignment, which accelerates the effective separation of electron-hole pairs. In addition, under the modulation of applied external electric field and biaxial strain, this heterostructure still keeps a type-II band alignment. This result reveals that 2D BP/AlN heterostructure shows a wide application prospect in the future photoelectric nanodevices.
- Publication:
-
Chemical Physics Letters
- Pub Date:
- October 2021
- DOI:
- 10.1016/j.cplett.2021.138989
- Bibcode:
- 2021CPL...78138989M
- Keywords:
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- BP/AlN heterostructure;
- Electronic properties;
- Electric field;
- Strain