Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
Abstract
The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically demonstrate the voltage-control of magnetic damping in ferro- and ferrimagnetic-insulator (FI)/topological-insulator (TI) bilayers. Assuming a capacitor-like setup, we formulate an effective dissipation torque induced by spin-charge pumping at the FI/TI interface as a function of an applied voltage. By using realistic material parameters, we find that the effective damping for a FI with 10 nm thickness can be tuned by one order of magnitude under the voltage of 0.25 V. Also, we provide perspectives on the voltage-induced modulation of the magnon spin transport on proximity-coupled FIs.
- Publication:
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Applied Physics Letters
- Pub Date:
- June 2021
- DOI:
- 10.1063/5.0046217
- arXiv:
- arXiv:2106.03332
- Bibcode:
- 2021ApPhL.118y2402C
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science;
- Physics - Applied Physics
- E-Print:
- 6 pages, 3 figures. Accepted to Applied Physics Letters