Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency
Abstract
Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times \tau_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $\tau_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory.
- Publication:
-
arXiv e-prints
- Pub Date:
- November 2020
- DOI:
- 10.48550/arXiv.2011.13878
- arXiv:
- arXiv:2011.13878
- Bibcode:
- 2020arXiv201113878F
- Keywords:
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- Physics - Applied Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 7 pages, 7 figures, International Symposium on Microelectronics Technology and Devices, 2014, Aracaju, Brasil. Proceedings of the SBMicro 2014, 2014