Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
Abstract
Traditionally, metal is used for the top electrode (TE) in HfO2-based resistance random access memory. When transparent indium-tin-oxide (ITO) is used as the TE, different forming processes, including lower forming voltages and higher forming currents, are exhibited. This work investigates the forming process with such a transparent TE under UV illumination. In addition, different TE thicknesses and device cell sizes are also investigated to confirm the results. Finally, a possible conduction model is provided to explain the mechanisms under UV-light illumination for the transparent TE during the forming process.
- Publication:
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Journal of Physics D Applied Physics
- Pub Date:
- January 2020
- DOI:
- 10.1088/1361-6463/ab467e
- Bibcode:
- 2020JPhD...53b5104H
- Keywords:
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- resistance random access memory (RRAM);
- UV-light illumination;
- forming process;
- indium–tin–oxide (ITO)