Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures
Abstract
In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. Three different GaAs substrate orientations have been investigated, namely (1 0 0), (3 1 1)A and (3 1 1)B. The I-V results revealed that the turn-on voltage (Von) of SPAN/(3 1 1)B GaAs heterojunction is higher than that for SPAN/(1 0 0) GaAs and SPAN/(3 1 1)A GaAs heterojunctions. The DLTS results showed that the number of electrically active defects present in devices based on the lower index (1 0 0) plane of GaAs substrate is higher than those of higher index (3 1 1)A and (3 1 1)B GaAs substrates, corroborating with I-V results. In order to investigate the role of interface states, capacitance-frequency measurements were performed in forward bias on all three devices.
- Publication:
-
Applied Surface Science
- Pub Date:
- February 2020
- DOI:
- 10.1016/j.apsusc.2019.144315
- Bibcode:
- 2020ApSS..50444315J
- Keywords:
-
- (1 0 0) GaAs;
- (3 1 1)A GaAs;
- (3 1 1)B GaAs;
- Hybrid device;
- I-V;
- C-V;
- DLTS