Demonstration of back contacted III-V/Ge triple junction solar cells
Abstract
Lattice matched III-V/Ge solar cells are mainstream for Concentrator PhotoVoltaics (CPV). Having both contacts on the back side could increase efficiency thanks to reduced shading and would provide an alternative to wire-bonding, shingling and MIMs as interconnections methods. In this paper, we present the first demonstration of back side contacted lattice matched III-V on Ge solar cell (InGaP/(In)GaAs/Ge). A specific process was developed to fabricate solar cells with a VOC of 2,38 V and a JSC of 9,9 mA/cm2. This result is a proof of concept and further developments should increase cell performance.
- Publication:
-
American Institute of Physics Conference Series
- Pub Date:
- November 2020
- DOI:
- 10.1063/5.0033094
- Bibcode:
- 2020AIPC.2298b0005M