Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors

Solution-processed carbon nanotubes (CNTs) have recently attracted significant attention as p-type thin-film transistor (TFT) channels due to their high carrier mobility, high uniformity, and low process temperature. However, implementing sophisticated macroelectronics with a combination of single CNT-TFTs has been challenging because it is difficult to fabricate n-type CNT-TFTs. Therefore, in combination with indium-gallium-zinc-oxide (IGZO), which has excellent electrical performance and has been commercialized as an n-type oxide TFT, we demonstrated various hybrid complementary metal-oxide semiconductor integrated circuits, such as inverters and uc(nor) and uc(nand) gates. This hybrid integration approach allows us to combine the strength of p-type CNT- and n-type IGZO-TFTs, thus offering a significant improvement for macroelectronic applications.