S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides
Abstract
Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2019
- DOI:
- 10.48550/arXiv.1901.07161
- arXiv:
- arXiv:1901.07161
- Bibcode:
- 2019arXiv190107161W
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- To be appear in Advanced Electronic Materials, 9 pages 4 figures