A large-signal Pspice modeling of GaN-based MIS-HEMTs
Abstract
In this work we present a physics-based semi-empirical large-signal model for GaN MIS-HEMTs, which introduces the non-segmented, smooth continuous equations to describe the static and dynamic characteristics of GaN MIS-HEMTs in different working regions. The unique physical effect of threshold voltage drift was considered for MIS-HEMTs in the current model, in addition to effects of the channel length modulation and the temperature drift. In addition, a current-controlled current source was used in the dynamic model to characterize the nonlinear capacitance including the gate-drain capacitance CGD, gate-source capacitance CGS and drain-source capacitance CDS at different operating voltages. The model is in excellent agreement with the experimental data for both drain current and capacitances over a typical range of applied voltages and temperatures.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- June 2019
- DOI:
- 10.1016/j.spmi.2019.05.023
- Bibcode:
- 2019SuMi..130..499L
- Keywords:
-
- GaN MIS-HEMTs;
- Large-signal model;
- Threshold voltage drift;
- Non-segmented equations