Study of multimode semiconductor lasers with buried mesas
Abstract
A buried-mesa AlGaAs/GaAs/GaInAs laser heterostructure emitting at a wavelength of 1050 nm is formed on a GaAs substrate by MOCVD. Mesa-stripe laser diodes with an aperture of 100 μm based on the obtained heterostructure are fabricated and studied. The internal optical losses of the laser diodes are 2.4 cm-1. The output powers in both directions achieved at a cavity length of 2900 μm in the cw and pulsed regimes were 2.1 and 23 W, respectively.
- Publication:
-
Quantum Electronics
- Pub Date:
- December 2019
- DOI:
- 10.1070/QEL17135
- Bibcode:
- 2019QuEle..49.1172S
- Keywords:
-
- semiconductor laser;
- laser diode;
- heterostructure;
- MOCVD;
- buried mesa