Ultralow Magnetic Damping in Co2Mn -Based Heusler Compounds: Promising Materials for Spintronics
Abstract
The prediction of ultralow magnetic damping in Co2Mn Z Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substitution of the Z elements in high-crystalline-quality films (Co2Mn Z with Z = Si , Ge , Sn , Al , Ga , Sb ), electronic properties such as the minority-spin band gap, Fermi-energy position in the band gap, and spin polarization can be tuned and the consequences for magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi-energy position, and the magnetic damping obtained in these films, together with predictions from ab initio calculations. The ultralow magnetic damping coefficients measured in the range from 4.1 × 10-4 to 9 × 10-4 for Co2Mn Si , Co2Mn Ge , Co2Mn Sn , and Co2Mn Sb are the lowest values obtained on a conductive layer and offer a clear experimental demonstration of theoretical predictions on half-metal magnetic Heusler compounds and a pathway for future materials design.
- Publication:
-
Physical Review Applied
- Pub Date:
- June 2019
- DOI:
- 10.1103/PhysRevApplied.11.064009
- arXiv:
- arXiv:1905.08987
- Bibcode:
- 2019PhRvP..11f4009G
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Physical Review Applied, American Physical Society, In press