Growth and electrical characterization of Cr-Lu2O3-Cr MIM structure by electron beam evaporation technique

In this paper, we have grown Cr-Lu₂O₃-Cr structure on glass substrate by electron beam evaporation technique. The electrical characterization of grown MIM diode was performed by temperature dependent current-voltage (I-V) characteristics in between 320-405 K. The electrical measurements revealed that schottky emission conduction mechanism is dominant across the metal-dielectric diode. The further justification in favor of schottky emission was provided by plotting the schottky and Arrhenius plots which show linear behavior. From these graphs we have calculated the temperature dependent dielectric constant whose value is in good agreement with the reported value of lutetium oxide dielectric constant. We have tested the possibility F-N tunneling and Poole-Frankel emission conduction mechanisms and found that these mechanisms are not operative in the diodes under investigation. Activation energy versus V^1/2 graph was also plotted to further justify our argument.