Monolith GaAsP/Si dual-junction solar cells grown by MBE
Abstract
The growth of monolith GaAsP/Si dual-junction solar cells on Si substrates by molecular-beam epitaxy is demonstrated. The technological method for the formation of a highly doped tunnel p+/n+ junction was developed. An obvious increase in the value of the open-circuit voltage indicating the contribution of the top-junction in the total open-circuit voltage monolithic dual-junction solar cells was found.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- December 2019
- DOI:
- 10.1088/1742-6596/1410/1/012040
- Bibcode:
- 2019JPhCS1410a2040S