A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo /4H-SiC Schottky contact
Abstract
The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H-SiC Schottky diode in 298-498 K temperature range has been investigated. Due to the barrier height inhomogeneities that prevail at the interface of the Schottky diode, a Gaussian distribution of the barrier height is assumed. We have extracted simultaneously, for every temperature, all the parameters characterizing the barrier height such as the mean barrier height \bar{φ }_{{{B}0}} , the coefficients ρ 2, ρ 3 quantifying the deformation of the barrier height, the corresponding temperature T 0 modeling the divergence of the ideality factor n from the unity, the standard deviation of the Gaussian distribution of the barrier σ s and also the series resistance R s using a vertical optimization process on the current without any graphical extraction about ρ 2, ρ 3, \bar{φ }_{{{B}0}} , σ s and R s. The extracted parameters like ( \bar{φ }_{{{B}0}} , ρ 2, ρ 3, σ s, R s) were found to be a temperature dependent. Moreover, an excellent agreement was obtained between the I- V- T plots calculated with the extracted parameters using a vertical optimization process with the experimental one.
- Publication:
-
Indian Journal of Physics
- Pub Date:
- September 2019
- DOI:
- 10.1007/s12648-019-01393-y
- Bibcode:
- 2019InJPh..93.1155T