Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al2O3 Layer
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- January 2019
- DOI:
- 10.1109/TED.2018.2875356
- Bibcode:
- 2019ITED...66..324L