Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
Abstract
- Publication:
-
IEICE Transactions on Electronics
- Pub Date:
- June 2019
- DOI:
- 10.1587/transele.2018FUS0006
- Bibcode:
- 2019IEITE.102..462Y