Broadband photoresponse of tellurium nanorods grown by molecular beam epitaxy
Abstract
In this work, we study the controlled growth of one-dimensional tellurium nanorods using molecular beam epitaxy on Si (1 1 1) substrates, and then as-grown high-density nanorods are fabricated into photodetectors. The morphology, growth mechanism, crystal structures, and photoresponse characteristics of tellurium nanorods are systematically studied in detail. The photodetector based on Te-nanorods shows fast response and decay time and broad-spectral response in a wide wavelength from near-ultraviolet to near-infrared regime. These findings further expend our knowledge about optoelectronic properties of Te nanorods and provide a possibility to the further development of nanorods multifunctional devices.
- Publication:
-
Chemical Physics Letters
- Pub Date:
- August 2019
- DOI:
- 10.1016/j.cplett.2019.05.026
- Bibcode:
- 2019CPL...729...49K
- Keywords:
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- Semiconductors;
- Epitaxial growth;
- Optoelectronic materials and properties