Precisely Located Si Vacancies in 4H-SiC Generated via Focused Li-ion Beam for Quantum Information Science Applications
Abstract
Photo-stable and spin (S = 3/2) coherent silicon vacancies (VSi) in the CMOS compatible semiconductor SiC are of interest for future applications in scalable quantum information and sensing. The ability to precisely create the desired density at the optimal location in a three-dimensional solid-state matrix with nanometer accuracy and excellent optical properties is indispensable for the above applications. Here we demonstrate the precise generation of single and ensemble emitter arrays in defect-free epitaxial 4H-SiC layer through Li-ions, implanted with an energy of 100 keV and doses ranging from 1012-1015 Li/cm2 using a maskless focused ion beam technique ( 25 nm diameter spot positioned with 25 nm accuracy and having anion travel depth of 400 nm). High-resolution photoluminescence (E⊥c) studies revealed the scalable and reproducible defect generation with a mean efficiency of 17 % and intensity ( 8 kC/s), yield ( 28 %), statistical distribution, average number of single VSi/spot, fluorescence saturation, and photostability of single emitters. Given the encouraging results, we will discuss utilizing this approach to implant single VSi into the mode maximum of SiC photonic crystal cavities with Purcell enhancement of zero-phonon line and increased photon indistinguishability.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARP11009P