Room Temperature Field Effect Investigation in SrIO3/SrTiO3 Thin Films
Abstract
Insulating thin films of layered SrIrO3/SrTiO3 (SISTO) have been chosen as a candidate system in which to explore field effect resistance switching, where the application of an electric field induces a reversible change in the electrical resistance. This allows for the possibility of creating a new field effect transistor (FET). The SISTO films were synthesized via pulsed laser deposition. The resistance was measured at room temperature using the 4-wire method. The field effect gate was created by placing an ion gel droplet on the film covered by a sheet of Pt foil. Preliminary data demonstrates the change of electrical resistance of the film upon application of voltage across the ion gel. Future work will include improving the experimental setup to reduce the likely temperature-dependent drift in the resistance measurements and investigating the effects of altering the voltage.
APS; McNair Scholars Program; Office for Training, Research, and Education in the Sciences (OTRES); Louis Stokes Alliance for Minority Participation (LSAMP).- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARG70026Z