Achieving A High Fidelity Controlled-NOT Gate Between A Pair Of Exchanged-Coupled Silicon Double-Quantum-Dot Hybrid Qubits
Abstract
It has been shown that operating qubits by varying exchange couplings while operating at sweet spots against detuning noise can improve gate fidelities. For double-quantum-dot hybrid qubits, this requires keeping the system in the large-detuning regime where dephasing is greatly suppressed. Here we show that, in a pair of exchange-coupled double-quantum-dot hybrid qubits, it is possible to exploit the large-detuning regime to achieve a sizeable exchange interaction between the qubits while suppressing leakage and dephasing, yielding a high-fidelity controlled phase gate with a gate time less than 1 ns. We find that the fidelity of a CNOT gate can be above 99.9%, in the presence of charge noise typical for semiconductor devices.
This work has been supported in part by ARO (W911NF-17-1-0274), the University of Wisconsin-Madison, and the Vannevar Bush Faculty Fellowship program sponsored by the Basic Research Office of the Assistant Secretary of Defense for Research and Engineering and funded by the Office of Naval Research through Grant N00014-15-1-0029. The views and conclusions contained in this work are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Office (ARO), or the U.S. Government.- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARE35005Y