Chemical vapor deposition of monolayer MoS2 on sapphire, Si and GaN substrates

Monolayer MoS₂ grown on sapphire, Si, and GaN substrates by chemical vapor deposition (CVD) method under the same growth conditions have been demonstrated, and the effects of diverse substrates on the morphological and optical properties of monolayer MoS₂ are systematically compared. The variations of the PL and Raman spectra of monolayer MoS₂ on the three substrates are mainly attributed to the different lattice mismatch and thermal conductivity between MoS₂ and the substrates. Moreover, uniform contrast of the PL and Raman intensity mappings suggest that the as-grown monolayer MoS₂ on diverse substrates achieve high quality and uniformity. Accordingly, the ability to grow monolayer MoS₂ with high quality to surface corrugation on diverse substrates would open a route toward the synthesis of heteroand composite structures.