Measurements and atomistic theory of electron g -factor anisotropy for phosphorus donors in strained silicon
Abstract
This work reports the measurement of electron g -factor anisotropy (|Δ g |=| g001-g1 1 ¯0| ) for phosphorous donor qubits in strained silicon (sSi = Si/Si1 -xGex ) environments. Multimillion-atom tight-binding simulations are performed to understand the measured decrease in |Δ g | as a function of x , which is attributed to a reduction in the interface-related anisotropy. For x <7 % , the variation in |Δ g | is linear and can be described by ηxx , where ηx≈1.62 ×10-3 . At x =20 % , the measured |Δ g | is 1.2 ±0.04 ×10-3 , which is in good agreement with the computed value of 1 ×10-3 . When strain and electric fields are applied simultaneously, the strain effect is predicted to play a dominant role on |Δ g | . Our results provide useful insights on the spin properties of sSi:P for spin qubits, and more generally for devices in spintronics and valleytronics areas of research.
- Publication:
-
Physical Review B
- Pub Date:
- July 2018
- DOI:
- 10.1103/PhysRevB.98.035432
- arXiv:
- arXiv:1712.06765
- Bibcode:
- 2018PhRvB..98c5432U
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science;
- Physics - Computational Physics
- E-Print:
- 5 pages, 4 figures