Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments
Abstract
P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.
- Publication:
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Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 2018
- DOI:
- 10.1016/j.nima.2017.10.010
- Bibcode:
- 2018NIMPA.882....1J
- Keywords:
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- Silicon detectors;
- AC-coupled;
- Characterization