Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells
Abstract
Volt-ampere and spectral characteristics of GaN/Si solar cell samples differing in interface layer preparation are obtained and analyzed. External quantum efficiency curves are experimentally determined via excitation with a 532 nm incident radiation wavelength. It is demonstrated that interface preparation has a significant influence on photovoltaic characteristics of the studied samples.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- March 2018
- DOI:
- 10.1088/1742-6596/993/1/012034
- Bibcode:
- 2018JPhCS.993a2034S