BCB Bonding Technology of Back-Side Illuminated COMS Device
Abstract
Back-side illuminated CMOS(BSI) sensor is a key device in spaceborne hyperspectral imaging technology. Compared with traditional devices, the path of incident light is simplified and the spectral response is planarized by BSI sensors, which meets the requirements of quantitative hyperspectral imaging applications. Wafer bonding is the basic technology and key process of the fabrication of BSI sensors. 6 inch bonding of CMOS wafer and glass wafer was fabricated based on the low bonding temperature and high stability of BCB. The influence of different thickness of BCB on bonding strength was studied. Wafer bonding with high strength, high stability and no bubbles was fabricated by changing bonding conditions.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- March 2018
- DOI:
- 10.1088/1742-6596/986/1/012023
- Bibcode:
- 2018JPhCS.986a2023W