Efficient iron doping of HVPE GaN
Abstract
Thick freestanding iron-doped semi-insulating GaN layers were grown by Hydride Vapor Phase Epitaxy on GaN/sapphire templates. Iron doping was achieved by using Fe57-enriched Fe2O3 reduced to elemental Fe in-situ avoiding uptake of C from organometallic sources. The morphology and crystalline quality of the films show no evidence of degradation upon iron doping. Mössbauer and spin resonance experiments demonstrate that the Fe-impurity is in the isolated Fe3+ paramagnetic state and no Fe-precipitates are formed at the highest doping levels. Low temperature photoluminescence studies are consistent with full compensation of the shallow pervasive Si and O donors.
- Publication:
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Journal of Crystal Growth
- Pub Date:
- October 2018
- DOI:
- 10.1016/j.jcrysgro.2018.07.030
- Bibcode:
- 2018JCrGr.500..111F
- Keywords:
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- A1. Characterization;
- A1. Impurities;
- A1. X-ray diffraction;
- A3. Hydride vapor phase epitaxy;
- B1. Nitrides;
- B2. Semiconducting materials