Sensing of Electrostatic Potential by Using Top-Gate Effect in Amorphous In-Ga-Zn-O Thin-Film Transistors
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 2018
- DOI:
- 10.1109/TED.2018.2834498
- Bibcode:
- 2018ITED...65.3073T