Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress Ruzzarin, M. ; Meneghini, M. ; Barbato, A. ; Padovan, V. ; Haeberlen, O. ; Silvestri, M. ; Detzel, T. ; Meneghesso, G. ; Zanoni, E. Abstract Publication: IEEE Transactions on Electron Devices Pub Date: July 2018 DOI: 10.1109/TED.2018.2836460 Bibcode: 2018ITED...65.2778R