High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 2018
- DOI:
- 10.1109/LED.2018.2822261
- Bibcode:
- 2018IEDL...39..723K