Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates
Abstract
Not Available
Supported by the National Key R&D Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601, the State Key Program of the National Natural Science Foundation of China under Grant No 61334001, the National Natural Science Foundation of China under Grant Nos 21405076, 11674147, 61604066, 51602141 and 11604137, the Key Technology Research and Development Program of Jiangxi Province under Grant Nos 20165ABC28007 and 20171BBE50052, and Jiangxi Province Postdoctoral Science Foundation Funded Project under Grant No 2015KY32.- Publication:
-
Chinese Physics Letters
- Pub Date:
- September 2018
- DOI:
- 10.1088/0256-307X/35/9/098501
- Bibcode:
- 2018ChPhL..35i8501W